Performance predictions of single-layer In-V double-gate n- and p-type field-effect transistors
Open access
Date
2016Type
- Conference Paper
ETH Bibliography
yes
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Permanent link
https://doi.org/10.3929/ethz-a-010810577Publication status
publishedPublisher
ETH-ZürichEvent
Subject
FELDEFFEKTTRANSISTOREN, FET (ELEKTRONIK); FIELD EFFECT TRANSISTORS, FET (ELECTRONICS)Organisational unit
02636 - Institut für Integrierte Systeme / Integrated Systems Laboratory
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ETH Bibliography
yes
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