Schottky-Barrierenfluktuationen in Pb₁₋xSnxSe/CaF₂/Si(111) Infrarot-Schottky-Dioden
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Author
Date
1996Type
- Doctoral Thesis
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https://doi.org/10.3929/ethz-a-001685510Publication status
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ETH ZürichSubject
SCHOTTKY-DIODEN (ELEKTRONIK); PHOTODIODEN (OPTOELEKTRONIK); OPTISCHE SENSOREN (OPTISCHE INSTRUMENTE); INFRAROT, 1 MM - 8000 ANGSTROM (OPTIK); ELEKTRONISCHE STÖRSTELLEN UND DEFEKTE (PHYSIK DER KONDENSIERTEN MATERIE); BLEI-ZINN-SELENIDE (ANORGANISCHE CHEMIE); OPTOELEKTRONISCHE BAUELEMENTE + PHOTOELEKTRONISCHE BAUELEMENTE (OPTOELEKTRONIK); SCHOTTKY DIODES (ELECTRONICS); PHOTODIODES (OPTOELECTRONICS); OPTICAL SENSORS (OPTICAL INSTRUMENTS); INFRARED, 1 MM - 8000 ANGSTROM (OPTICS); ELECTRONIC IMPERFECTIONS AND DEFECTS (CONDENSED MATTER PHYSICS); LEAD-TIN SELENIDES (INORGANIC CHEMISTRY); OPTOELECTRONIC DEVICES + PHOTOELECTRONIC DEVICES (OPTOELECTRONICS)Notes
Diss. Naturwiss. ETH Zürich, Nr. 11741, 1996. Ref.: Danilo Pescia ; Korref.: Hans Zogg.More
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