Herstellung, Charakterisierung und Modellierung von InAIAs/InGaAs/InP HEMT Transistoren für Anwndungen im mm-Wellenbereich

Metadata Label Value
Author(s): Bergamaschi, Crispino Enrico
Publisher: Unknown
Citation:

Bergamaschi, Crispino Enrico. Herstellung, Charakterisierung und Modellierung von InAIAs/InGaAs/InP HEMT Transistoren für Anwndungen im mm-Wellenbereich. (1994). http://dx.doi.org/10.3929/ethz-a-000943654

Document Type: Doctoral and Habilitation Theses  
Documents: Abstract (138.89KB)

Detailed Information

Metadata Description
Title Herstellung, Charakterisierung und Modellierung von InAIAs/InGaAs/InP HEMT Transistoren für Anwndungen im mm-Wellenbereich
Author(s) Bergamaschi, Crispino Enrico
Publication Place Zürich
Publication Date 1994
Notes Diss. Techn. Wiss. ETH Zürich, Nr. 10499, 1994. Ref.: W. Bächtold ; Korref.: H. Jäckel
Language German
DOI http://dx.doi.org/10.3929/ethz-a-000943654
Subject(s) Electronics, Power Electronics and Mechatronics
Keyword(s) ELECTRONICS
INDIUM-ARSENIC COMPOUNDS
INORGANIC CHEMISTRY
INDIUM PHOSPHIDES
GALLIUM-INDIUM COMPOUNDS
Description File Name MIME Type Size
Abstract   eth-39348-01.pdf application/pdf 138.89KB
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E-Collection record created: Wed, 18 Feb 2009, 14:09:51 CET