Herstellung, Charakterisierung und Modellierung von InAIAs/InGaAs/InP HEMT Transistoren für Anwndungen im mm-Wellenbereich
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Date
1994Type
- Doctoral Thesis
ETH Bibliography
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https://doi.org/10.3929/ethz-a-000943654Publication status
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ETH ZürichSubject
HIGH-ELECTRON-MOBILITY TRANSISTORS, HEMT (ELEKTRONIK); INDIUM-ARSEN-VERBINDUNGEN (ANORGANISCHE CHEMIE); INDIUMPHOSPHID (ANORGANISCHE CHEMIE); GALLIUM-INDIUM-VERBINDUNGEN (ANORGANISCHE CHEMIE); HIGH-ELECTRON-MOBILITY TRANSISTORS, HEMT (ELECTRONICS); INDIUM-ARSENIC COMPOUNDS (INORGANIC CHEMISTRY); INDIUM PHOSPHIDES (INORGANIC CHEMISTRY); GALLIUM-INDIUM COMPOUNDS (INORGANIC CHEMISTRY)Notes
Diss. Techn. Wiss. ETH Zürich, Nr. 10499, 1994. Ref.: W. Bächtold ; Korref.: H. Jäckel.More
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ETH Bibliography
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