Offset gate field effect transistors with high drain breakdown potential and low Miller feedback capacitance
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Author
Date
1967Type
- Doctoral Thesis
ETH Bibliography
yes
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https://doi.org/10.3929/ethz-a-000085667Publication status
publishedExternal links
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ETH ZürichSubject
FELDEFFEKTTRANSISTOREN, FET (ELEKTRONIK); FIELD EFFECT TRANSISTORS, FET (ELECTRONICS)Notes
Diss. Techn.Wiss. ETH Zürich, Nr. 4023, 0000. Ref.: Strutt, M.J.O. ; Korref.: Guggenbühl, W..More
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ETH Bibliography
yes
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