Offset gate field effect transistors with high drain breakdown potential and low Miller feedback capacitance

Metadata Label Value
Author(s): Dill, Hans G.
Publisher: Unknown
Citation:

Dill, Hans G.. Offset gate field effect transistors with high drain breakdown potential and low Miller feedback capacitance. (1967). http://dx.doi.org/10.3929/ethz-a-000085667

Document Type: Doctoral and Habilitation Theses  
Documents: Abstract (112.86KB)

Detailed Information

Metadata Description
Title Offset gate field effect transistors with high drain breakdown potential and low Miller feedback capacitance
Author(s) Dill, Hans G.
Publication Place Zürich
Publication Date 1967
Notes Diss. Techn.Wiss. ETH Zürich, Nr. 4023, 0000. Ref.: Strutt, M.J.O. ; Korref.: Guggenbühl, W.
Language English
DOI http://dx.doi.org/10.3929/ethz-a-000085667
Subject(s) Electronics, Power Electronics and Mechatronics
Keyword(s) FIELD EFFECT TRANSISTORS
Description File Name MIME Type Size
Abstract   eth-31449-01.pdf application/pdf 112.86KB
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E-Collection record created: Wed, 18 Feb 2009, 04:19:51 CET