Grid adaptation for the stationary two-dimensional drift-diffusion model in semiconductor device simulation
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Author
Date
2002Type
- Doctoral Thesis
ETH Bibliography
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Permanent link
https://doi.org/10.3929/ethz-a-004316242Publication status
publishedExternal links
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Contributors
Examiner: Fichtner, Wolfgang
Publisher
s.n.Subject
TRANSIENTENANALYSE (ELEKTROTECHNIK); HALBLEITERBAUELEMENTE + ELEKTRONISCHE BAUELEMENTE (ELEKTRONIK); TRANSPORTGLEICHUNGEN (ANALYSIS); MEHRGITTERVERFAHREN + GITTERERZEUGUNG (NUMERISCHE MATHEMATIK); HOMOTOPIEVERFAHREN (NUMERISCHE MATHEMATIK); TRANSISTOREN/TEGFET, VFET, MODFET, MOSFET, MESFET, SGFET, ISFET, MISFET, HFET, JFET, CIGFET, POSFET (ELEKTRONIK); TRANSIENT ANALYSIS (ELECTRICAL ENGINEERING); SEMICONDUCTOR COMPONENTS + ELECTRONIC COMPONENTS (ELECTRONICS); TRANSPORT EQUATIONS (MATHEMATICAL ANALYSIS); MULTIGRID METHODS + GRID GENERATION (NUMERICAL MATHEMATICS); CONTINUATION METHODS (NUMERICAL MATHEMATICS); TRANSISTORS/TEGFET, VFET, MODFET, MOSFET, MESFET, SGFET, ISFET, MISFET, HFET, JFET, CIGFET, POSFET (ELECTRONICS)Organisational unit
03228 - Fichtner, Wolfgang
Notes
Diss., Technische Wissenschaften ETH Zürich, Nr. 14449, 2002.More
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ETH Bibliography
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