Optimization and characterization of GaN-based high electron mobility transistors

Metadata Label Value
Author(s): Sun, Haifeng
Publisher: Shaker Verlag GmbH
Citation:

Sun, Haifeng. Optimization and characterization of GaN-based high electron mobility transistors. Shaker Verlag GmbH (2012). http://dx.doi.org/10.3929/ethz-a-006960235

Document Type: Doctoral and Habilitation Theses  
Documents: Abstract (120.76KB) Fulltext available within the ETH Zurich IP domain
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Detailed Information

Metadata Description
Title Optimization and characterization of GaN-based high electron mobility transistors
Author(s) Sun, Haifeng
Publication Place Aachen
Publisher Shaker Verlag GmbH
Publication Date 2012
Notes Diss., Eidgenössische Technische Hochschule ETH Zürich, Nr. 19766, 2011
Series Berichte aus der Elektrotechnik
Varying Title Optimization and characterization of GaN-based HEMTs
Language English
DOI http://dx.doi.org/10.3929/ethz-a-006960235
ISBN 978-3-8440-0683-4
Subject(s) Semiconductor Technology
Materials Testing, Properties
Keyword(s) TRANSISTORS
GALLIUM NITRIDES
LITHOGRAPHY
MICROWAVE ENGINEERING
Online Publication Date 2012
Description File Name MIME Type Size
Abstract   eth-5209-01.pdf application/pdf 120.76KB
Fulltext available within the ETH Zurich IP domain
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E-Collection record created: Sat, 18 Feb 2012, 06:58:02 CET