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Optimization and characterization of GaN-based high electron mobility transistors
| Metadata Label | Value |
|---|---|
| Author(s): | Sun, Haifeng |
| Publisher: | Shaker Verlag GmbH |
| Citation: | Sun, Haifeng. Optimization and characterization of GaN-based high electron mobility transistors. Shaker Verlag GmbH (2012). http://dx.doi.org/10.3929/ethz-a-006960235 |
| Document Type: | Doctoral and Habilitation Theses |
| Documents: |
Abstract
(120.76KB) |
Detailed Information
| Metadata | Description |
|---|---|
| Title | Optimization and characterization of GaN-based high electron mobility transistors |
| Author(s) | Sun, Haifeng |
| Publication Place | Aachen |
| Publisher | Shaker Verlag GmbH |
| Publication Date | 2012 |
| Notes | Diss., Eidgenössische Technische Hochschule ETH Zürich, Nr. 19766, 2011 |
| Series | Berichte aus der Elektrotechnik |
| Varying Title | Optimization and characterization of GaN-based HEMTs |
| DOI | http://dx.doi.org/10.3929/ethz-a-006960235 |
| ISBN | 978-3-8440-0683-4 |
| Subject(s) |
Semiconductor Technology Materials Testing, Properties |
| Keyword(s) |
TRANSISTORS ELECTRONICS GALLIUM NITRIDES INORGANIC CHEMISTRY LITHOGRAPHY MICROLITHOGRAPHY NANOLITHOGRAPHY MICROELECTRONICS MICROWAVE ENGINEERING ELECTRICAL ENGINEERING |
| Online Publication Date | 2012 |
| Description | File Name | MIME Type | Size |
|---|---|---|---|
| Abstract |
eth-5209-01.pdf |
application/pdf | 120.76KB |
| Description | URL |
|---|---|
| NEBIS Link | http://opac.nebis.ch/F/?local_base=NEBIS&func=find-b&find_code=SYS&request=006960235 |
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E-Collection record created: Sat, 18 Feb 2012, 06:58:02 CET