Analysis and development of high voltage bipolar transistors for BiCMOS smart power applications

Metadata Label Value
Author(s): Ryter, Roland
Publisher: Unknown
Citation:

Ryter, Roland. Analysis and development of high voltage bipolar transistors for BiCMOS smart power applications. (1996). http://dx.doi.org/10.3929/ethz-a-001637862

Document Type: Doctoral and Habilitation Theses  
Documents: Abstract (201.28KB)

Detailed Information

Metadata Description
Title Analysis and development of high voltage bipolar transistors for BiCMOS smart power applications
Author(s) Ryter, Roland
Publication Place Zürich
Publication Date 1996
Notes Diss. Techn. Wiss. ETH Zürich, Nr. 11446, 1996. Ref.: W. Fichtner ; Korref.: A. Birolini
Language English
DOI http://dx.doi.org/10.3929/ethz-a-001637862
Subject(s) Microelectronics, Integrated Circuits
Keyword(s) BIPOLAR-COMPLEMENTARY-MOS-CIRCUITS
MICROELECTRONICS
HIGH VOLTAGE
UP TO 400 KV
ELECTRICAL ENGINEERING
BIPOLAR TRANSISTORS
ELECTRONICS
BREAKDOWN VOLTAGE
Description File Name MIME Type Size
Abstract   eth-40286-01.pdf application/pdf 201.28KB
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E-Collection record created: Wed, 18 Feb 2009, 15:24:42 CET