Operation and performance limits of MOS controlled semiconductor power devices

Metadata Label Value
Author(s): Lendenmann, Heinz
Publisher: Unknown
Citation:

Lendenmann, Heinz. Operation and performance limits of MOS controlled semiconductor power devices. (1995). http://dx.doi.org/10.3929/ethz-a-001410927

Document Type: Doctoral and Habilitation Theses  
Documents: Abstract (206.28KB)
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Detailed Information

Metadata Description
Title Operation and performance limits of MOS controlled semiconductor power devices
Author(s) Lendenmann, Heinz
Publication Place Zürich
Publication Date 1995
Notes Diss. Techn. Wiss. ETH Zürich, Nr. 10819, 1995. Ref.: W. Fichtner ; Korref.: A. Jaecklin
Language English
DOI http://dx.doi.org/10.3929/ethz-a-001410927
Subject(s) Semiconductor Technology
Keyword(s) POWER ELECTRONICS
SEMICONDUCTOR COMPONENTS
ELECTRONIC COMPONENTS
ELECTRONICS
BIPOLAR METAL OXIDE SEMICONDUCTORS
SEMICONDUCTOR TECHNOLOGY
GATE TURN-OFF THYRISTORS
INSULATED-GATE-BIPOLAR-TRANSISTORS
METAL OXIDE SEMICONDUCTOR TRANSISTORS
POWER SEMICONDUCTORS
MOS CONTROLLED THYRISTORS
Description File Name MIME Type Size
Abstract   eth-39705-01.pdf application/pdf 206.28KB
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E-Collection record created: Wed, 18 Feb 2009, 14:37:20 CET