Gate oxide integrity of BiMOS power devices

Metadata Label	Value
Author(s):	Herr, Egon
Publisher:	Unknown
Citation:	Herr, Egon. Gate oxide integrity of BiMOS power devices. (1994). http://dx.doi.org/10.3929/ethz-a-001369202
Document Type:	Doctoral and Habilitation Theses
Documents:	Abstract (277.16KB)

Detailed Information

Metadata	Description
Title	Gate oxide integrity of BiMOS power devices
Author(s)	Herr, Egon
Publication Place	Zürich
Publication Date	1994
Notes	Diss. Techn. Wiss. ETH Zürich, Nr. 10678, 1994. Ref.: H. Baltes ; Korref.: W. Fichtner
Language	English
DOI	http://dx.doi.org/10.3929/ethz-a-001369202
ISBN	3-907574-04-4
Subject(s)	Semiconductor Technology
Keyword(s)	POWER ELECTRONICS BIPOLAR METAL OXIDE SEMICONDUCTORS SEMICONDUCTOR TECHNOLOGY CONDUCTIVITY OF SEMICONDUCTORS ELECTRODYNAMICS

Description	File Name	MIME Type	Size
Abstract	eth-39549-01.pdf	application/pdf	277.16KB

Description	URL
NEBIS Link	http://opac.nebis.ch/F/?local_base=NEBIS&func=find-b&find_code=SYS&request=001369202

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