Theoretische und praktische Untersuchung über das Rauschverhalten von Feldeffekt-Transistoren im Pinchoff-Gebiet

Metadata Label Value
Author(s): Kässer, Rudolf
Publisher: Juris
Citation:

Kässer, Rudolf. Theoretische und praktische Untersuchung über das Rauschverhalten von Feldeffekt-Transistoren im Pinchoff-Gebiet. Juris (1973). http://dx.doi.org/10.3929/ethz-a-000093342

Document Type: Doctoral and Habilitation Theses  
Documents: Abstract (128.04KB)

Detailed Information

Metadata Description
Title Theoretische und praktische Untersuchung über das Rauschverhalten von Feldeffekt-Transistoren im Pinchoff-Gebiet
Author(s) Kässer, Rudolf
Publication Place Zürich
Publisher Juris
Publication Date 1973
Notes Diss. Techn.Wiss. ETH Zürich, Nr. 5084, 0000. Ref.: Baumann, E. ; Korref.: Guggenbühl, W.
Language German
DOI http://dx.doi.org/10.3929/ethz-a-000093342
ISBN 3-260-03587-7
Subject(s) Electronics, Power Electronics and Mechatronics
Keyword(s) FIELD EFFECT TRANSISTORS
Description File Name MIME Type Size
Abstract   eth-33244-01.pdf application/pdf 128.04KB
Abstract Views and Downloads
Views 11  abstracts
Downloads 26  downloads

Abstract Views and Downloads by Country
Germany Views abstracts
Downloads 15  downloads
Views abstracts
Downloads downloads
Switzerland Views abstracts
Downloads downloads
Greece Views abstracts
Downloads downloads
Belgium Views abstracts
Downloads downloads
China Views abstracts
Downloads downloads
United Kingdom Views abstracts
Downloads downloads
Canada Views abstracts
Downloads downloads


E-Collection record created: Wed, 18 Feb 2009, 06:18:14 CET