Offset gate field effect transistors with high drain breakdown potential and low Miller feedback capacitance

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Autor(en): Dill, Hans G.
Verlag: Unbekannt
Zitierweise:

Dill, Hans G.. Offset gate field effect transistors with high drain breakdown potential and low Miller feedback capacitance. (1967). http://dx.doi.org/10.3929/ethz-a-000085667

Dokumententyp: Dissertationen und Habilitationen  
Dokumente: Abstract (112.86KB)
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Metadaten Beschreibung
Title Offset gate field effect transistors with high drain breakdown potential and low Miller feedback capacitance
Author(s) Dill, Hans G.
Publication Place Zürich
Publication Date 1967
Notes Diss. Techn.Wiss. ETH Zürich, Nr. 4023, 0000. Ref.: Strutt, M.J.O. ; Korref.: Guggenbühl, W.
Language English
DOI http://dx.doi.org/10.3929/ethz-a-000085667
Subject(s) Elektronik, Leistungselektronik und Mechatronik
Keyword(s) FELDEFFEKTTRANSISTOREN
FET
Beschreibung Dateiname MIME Type Grösse
Abstract   eth-31449-01.pdf application/pdf 112.86KB
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E-Collection record created: Wed, 18 Feb 2009, 04:19:51 CET