Quantum-mechanical modeling of transport parameters for MOS devices

Metadata Label	Value
Author(s):	Höhr, Timm
Publisher:	ETH
Citation:	Höhr, Timm. Quantum-mechanical modeling of transport parameters for MOS devices. ETH (2005). http://dx.doi.org/10.3929/ethz-a-005114681
Document Type:	Doctoral and Habilitation Theses
Documents:	Abstract (191.54KB)

Detailed Information

Metadata	Description
Title	Quantum-mechanical modeling of transport parameters for MOS devices
Author(s)	Höhr, Timm
Publication Place	Zürich
Publisher	ETH
Publication Date	2005
Notes	Diss., Technische Wissenschaften, Eidgenössische Technische Hochschule ETH Zürich, Nr. 16228, 2006
Language	English
DOI	http://dx.doi.org/10.3929/ethz-a-005114681
Subject(s)	Microelectronics, Integrated Circuits
Keyword(s)	NUMERICAL SIMULATION AND MATHEMATICAL MODELING METAL OXIDE SEMICONDUCTOR TRANSISTORS ELECTRONICS ELECTRON TRANSPORT CONDENSED-MATTER PHYSICS

Description	File Name	MIME Type	Size
Abstract	eth-28324-01.pdf	application/pdf	191.54KB

Description	URL
NEBIS Link	http://opac.nebis.ch/F/?local_base=NEBIS&func=find-b&find_code=SYS&request=005114681

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