Grid adaptation for the stationary two-dimensional drift-diffusion model in semiconductor device simulation

Metadata Label Value
Author(s): Schmithüsen, Bernhard
Publisher: Unknown
Citation:

Schmithüsen, Bernhard. Grid adaptation for the stationary two-dimensional drift-diffusion model in semiconductor device simulation. (2002). http://dx.doi.org/10.3929/ethz-a-004316242

Document Type: Doctoral and Habilitation Theses  
Documents: Abstract (124.50KB)
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Metadata Description
Title Grid adaptation for the stationary two-dimensional drift-diffusion model in semiconductor device simulation
Author(s) Schmithüsen, Bernhard
Publication Place Zürich
Publication Date 2002
Notes Diss., Technische Wissenschaften ETH Zürich, Nr. 14449, 2002
Language English
DOI http://dx.doi.org/10.3929/ethz-a-004316242
Subject(s) Microelectronics, Integrated Circuits
Applied Mathematics
Keyword(s) TRANSIENT ANALYSIS
ELECTRICAL ENGINEERING
SEMICONDUCTOR COMPONENTS
ELECTRONIC COMPONENTS
ELECTRONICS
TRANSPORT EQUATIONS
MATHEMATICAL ANALYSIS
MULTIGRID METHODS
GRID GENERATION
NUMERICAL MATHEMATICS
CONTINUATION METHODS
TRANSISTORS
Description File Name MIME Type Size
Abstract   eth-25048-01.pdf application/pdf 124.50KB
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E-Collection record created: Fri, 18 Apr 2008, 23:44:19 CET