High voltage MOS device design

Metadata Label Value
Author(s): Omura, Ichiro
Publisher: Unknown
Citation:

Omura, Ichiro. High voltage MOS device design. injection enhancement and negative gate capacitance. (2000). http://dx.doi.org/10.3929/ethz-a-004180046

Document Type: Doctoral and Habilitation Theses  
Documents: Abstract (114.85KB)
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Detailed Information

Metadata Description
Title High voltage MOS device design
Subtitle injection enhancement and negative gate capacitance
Author(s) Omura, Ichiro
Publication Place Zürich
Publication Date 2000
Notes Diss., Technischen Wissenschaften ETH Zürich, Nr. 14049, 2001
Language English
DOI http://dx.doi.org/10.3929/ethz-a-004180046
Subject(s) Electronics, Power Electronics and Mechatronics
Keyword(s) POWER ELECTRONICS
GATE TURN-OFF THYRISTORS
INSULATED-GATE-BIPOLAR-TRANSISTORS
HIGH VOLTAGE
UP TO 400 KV
METAL OXIDE SEMICONDUCTOR TRANSISTORS
Description File Name MIME Type Size
Abstract   eth-24149-01.pdf application/pdf 114.85KB
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E-Collection record created: Fri, 18 Apr 2008, 22:52:04 CET