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Characterization of degradation and failure phenomena in MOS devices
| Metadata Label | Value |
|---|---|
| Author(s): | Pfäffli, Paul |
| Publisher: | Unknown |
| Citation: | Pfäffli, Paul. Characterization of degradation and failure phenomena in MOS devices. (1999). http://dx.doi.org/10.3929/ethz-a-003825871 |
| Document Type: | Doctoral and Habilitation Theses |
| Documents: |
Abstract
(538.58KB),
Fulltext
(13.60MB) |
Detailed Information
| Metadata | Description |
|---|---|
| Title | Characterization of degradation and failure phenomena in MOS devices |
| Author(s) | Pfäffli, Paul |
| Publication Place | Zürich |
| Publication Date | 1999 |
| Notes | Diss. Techn. Wiss. ETH Zürich, Nr. 13274 1999. Ref.: W. Fichtner ; Korref.: José Solo de Zaldivar |
| Language | English |
| DOI | http://dx.doi.org/10.3929/ethz-a-003825871 |
| Subject(s) |
Electrical Engineering, General Electronics, Power Electronics and Mechatronics |
| Keyword(s) |
DEFECT RECOGNITION FAULT RECOGNITION ELECTRICAL ENGINEERING DEGRADATION ELECTRONICS METAL OXIDE SEMICONDUCTOR TRANSISTORS |
| Description | File Name | MIME Type | Size |
|---|---|---|---|
| Abstract |
eth-23151-01.pdf |
application/pdf | 538.58KB |
| Fulltext |
eth-23151-02.pdf |
application/pdf | 13.60MB |
| Description | URL |
|---|---|
| NEBIS Link | http://opac.nebis.ch/F/?local_base=NEBIS&func=find-b&find_code=SYS&request=003825871 |
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E-Collection record created: Fri, 18 Apr 2008, 21:39:52 CET